IXDP20N60BD1 High Voltage IGBT

IXYS

Description

IXDP 20N60B D1 High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.2 V C TO-220.

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Datasheet Specifications

Part number: IXDP20N60BD1
Manufacturer: IXYS
File Size: 757.29 KB
Datasheet: IXDP20N60BD1-IXYS.pdf
Description: High Voltage IGBT

Features

* VCES VCGR VGES VGEM T IC25 IC90 ICM U RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH tSC O (SCSOA) - PC VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non

Applications

* °C
* AC motor speed control °C
* DC servo and robot drives
* DC choppers Nm
* Uninteruptible power supplies (UPS)
* Switch-mode and resonant-mode g power supplies A Symbol Conditions PH V(BR)CES VGE = 0 V Characteristic Values (TJ = 25°C, unless otherwise speciﬁed) min

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IXDP20N60BD1 High Voltage IGBT IXYS

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