V53C16258H - HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
V53C16258H Features
* s 256K x 16-bit organization s EDO Page Mode for a sustained data rate of 100 MHz s RAS access time: 25, 30, 35, 40, 45, 50 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh s Optional Self Refresh (V53C16258SH) s Refresh Interval: 512 cycles/
