S27KS0641 (Cypress Semiconductor)
Self-Refresh DRAM
Not Recommended for New Designs (NRND)
S27KL0641/S27KS0641 S70KL1281/S70KS1281
3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAM™ Self-Refresh DRAM
(5 views)
HB56SW3272ESK (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
(4 views)
HB56SW3272ESK-5 (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
(4 views)
HYB3118165BSJ-60 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k Refresh
1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperat
(4 views)
V54C316162 (Mosel Vitelic Corp)
4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM
MOSEL VITELIC
V54C316162V 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162V
Clock Fre
(4 views)
HYB3116160BST-70 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh)
HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70
Advanced Information
• • •
1 048 576 wor
(3 views)
HYB3117405BJ-60 (Siemens Semiconductor Group)
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit o
(3 views)
HYB3117405BT-50 (Siemens Semiconductor Group)
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit o
(3 views)
HYB3118160BSJ-70 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh)
HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70
Advanced Information
• • •
1 048 576 wor
(3 views)
HYB3118165BST-50 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k Refresh
1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperat
(3 views)
HYB3118165BST-60 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k Refresh
1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperat
(3 views)
V53C16256SH (Mosel Vitelic Corp)
256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH
MOSEL VITELIC
V53C16256SH 256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC) Max
(3 views)
HYB5116405BJ-70 (Siemens)
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)
Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperat
(3 views)
HM5165165F (Hitachi Semiconductor)
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165F Series HM5165165F Series
64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh
ADE-203-1058B(Z) Rev. 2.0 Nov. 30, 1999 Description
The Hit
(3 views)
HM51W16165 (Hitachi Semiconductor)
(HM51W16165 / HM51W18165) 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
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(3 views)
S27KS0642 (Cypress)
HyperRAM Self-Refresh DRAM
S27KL0642/S27KS0642
3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM
S27KL0642/S27KS0642, 3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM
(3 views)
S27KS0642 (Infineon)
64Mb self-refresh DRAM
S27KL0642, S27KS0642
64Mb HYPERRAM™ self-refresh DRAM (PSRAM)
HYPERBUS™ interface, 1.8 V/3.0 V
Features
• Interface - HYPERBUS™ interface - 1.8 V /
(3 views)
S27KL0642 (Infineon)
64Mb self-refresh DRAM
S27KL0642, S27KS0642
64Mb HYPERRAM™ self-refresh DRAM (PSRAM)
HYPERBUS™ interface, 1.8 V/3.0 V
Features
• Interface - HYPERBUS™ interface - 1.8 V /
(3 views)
HB56SW3272ESK-6 (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
(2 views)
HYB3116160BSJ-50 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh)
HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70
Advanced Information
• • •
1 048 576 wor
(2 views)
