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HYB3118160BSJ-70 Datasheet - Siemens Semiconductor Group

HYB3118160BSJ-70 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns <.

HYB3118160BSJ-70 Features

* include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 3116160BSJ-60 HYB 3116160BSJ-70 HYB 3118160BSJ-50 HYB 3

HYB3118160BSJ-70 Datasheet (258.13 KB)

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Datasheet Details

Part number:

HYB3118160BSJ-70

Manufacturer:

Siemens Semiconductor Group

File Size:

258.13 KB

Description:

1m x 16-bit dynamic ram 1k & 4k -refresh.

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TAGS

HYB3118160BSJ-70 16-Bit Dynamic RAM -Refresh Siemens Semiconductor Group

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