Datasheet Details
- Part number
- HYB3118160BST-60
- Manufacturer
- Siemens Semiconductor Group
- File Size
- 258.13 KB
- Datasheet
- HYB3118160BST-60_SiemensSemiconductorGroup.pdf
- Description
- 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Pin Names A0 to A9 A0 to A9 A0 to A11 A0 to A7 RAS OE I/O1-I/O16 UCAS LCAS WE VCC VSS N.C.Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST Column Addess Inputs for 1k-refresh version HYB
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