* g g
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* International standard packages
* Low RDS (on)
* Rated for unclamped Inductive load Switching (UIS)
* Molding epoxies meet UL 94 V-0 flammabili
IXFA4N100Q Datasheet (105.31 KB)
IXFA4N100Q
IXYS Corporation
105.31 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDS.
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