* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifier Applications
* DC-DC converters Mounting t
IXFE23N100 Datasheet (454.36 KB)
IXFE23N100
IXYS Corporation
454.36 KB
Single mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d.
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