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HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1
VDSS
ID25
RDS(on) 0.24 Ω 0.28 Ω
IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns
Maximum Ratings 1000 1000 ± 20 ± 30 36N100 34N100 36N100 34N100 33 30 144 136 36 64 4 5 580 -55 ... +150 150 -55 ...
IXFE34N100 Datasheet
