* Low cost direct-copper bonded aluminium package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* 2500V isolation
* Low drain to case capacitance
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unc
IXFE50N50 Datasheet (681.47 KB)
IXFE50N50
IXYS Corporation
681.47 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet VDSS IXFE 55N50 IXFE 50N50 ID25 RDS(on) 80 mΩ 100 mΩ 500 V 5.
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