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IXFH150N17T2 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH150N17T2 IXFT150N17T2 VDSS ID25 RDS(on) trr = = ≤ ≤ 175V 150A 12.0mΩ 160ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 175 175 ± 20 ± 30 150 400 75 1.0 15 880 -55 ... +175 175 -55 ... +175 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.

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Key Features

  • z z Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 z z z High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 175 2.5 4.5 ± 200 V.

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