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IXFH23N60Q Datasheet HiPerFET Power MOSFETs Q-Class

Manufacturer: IXYS (now Littelfuse)

Overview: HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet IXFH 23N60Q IXFT 23N60Q VDSS ID25 RDS(on) = = = 600 V 23 A 0.32 Ω trr ≤ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 23 92 23 30 1.5 15 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g g TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G G = Gate S = Source S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.

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Key Features

  • z 1.13/10 Nm/lb. in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.32 V V nA µA mA Ω IXYS advanced low gate charge process z International standard packages z Low gate charge and capacitance - easier to drive - faster switching z Low RDS (on) z Unclamped Inductive Switching (UIS.

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