* l l l 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.0 4.0 ±100 25 1 40 V V nA µ
IXFH58N20Q Datasheet (294.70 KB)
IXFH58N20Q
IXYS Corporation
294.70 KB
Hiperfet power mosfets.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg www.DataSheet4U.com Preliminary data sheet IXFH 58N20Q.
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