IXFH58N20Q mosfets equivalent, hiperfet power mosfets.
l l l
1.13/10 Nm/lb.in.
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = .
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