IXFH60N20F
Features l l l
1.13/10 Nm/lb.in. 6 4 g g l l
RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect Fast intrinsic rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 n A TJ = 125°C 50 µA 1.5 m A 38 m Ω l l
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1m A VDS = VGS, ID = 4m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 l l l l l
DC-DC converters Switched-mode and resonant-mode power supplies, >500k Hz switching DC choppers 13.5 MHz industrial applications Pulse generation Laser drivers RF amplifiers
Advantages l l
Space savings High power density
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98885 (1/02)
IXFH 60N20F IXFT 60N20F ..
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 18 26 2930 VGS = 0 V, VDS...
