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ADVANCE TECHNICAL INFORMATION
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
IXFH 60N20 IXFT 60N20
VDSS = 200 V = 60 A ID25 RDS(on) = 33 mΩ trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 200 200 ±20 ±30 60 240 60 50 2.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A mJ J V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 ( IXFT) Case Style
G S (TAB)
G = Gate D = Drain S = Source TAB = Drain
1.6 mm (0.
IXFH60N20 Datasheet
