Click to expand full text
Advance Technical Information
www.DataSheet4U.com
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 60N20F IXFT 60N20F
VDSS ID25 RDS(on)
= = =
200V 60A 38mΩ
trr ≤ 200 ns
TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings
(TAB)
200 200 ± 20 ± 30 60 240 60 35 1.5 10 315 -55 ... +150 150 -55 ...
IXFH60N20F Datasheet
