* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Symbol Test Conditions (TJ = 25°C, unless otherwise specified)
IXFH70N15 Datasheet (108.20 KB)
IXFH70N15
IXYS Corporation
108.20 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary Data Sheet IXFH 70N15 IXFT 70N15 VDSS ID25 RDS.
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