IXFH7N80 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
- Part: IXFH7N80
- Description: Power MOSFET
- Manufacturer: IXYS
- Size: 137.05 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFH7N90 | Power MOSFET |
| IXFH7N90Q | Power MOSFET |
| IXFH70N15 | Power MOSFET |
| IXFH74N20 | Power MOSFET |
| IXFH74N20P | PolarHT HiPerFET Power MOSFET |