* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 85 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 50 1 9 V V nA mA mA mW Advantages
* Easy to mount
* Space savings
* High power density
* International standard packages
IXFH80N085 Datasheet (54.03 KB)
IXFH80N085
IXYS Corporation
54.03 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID.
📁 Related Datasheet
IXFH80N08 Power MOSFET (IXYS)
IXFH80N10 Power MOSFET (IXYS Corporation)
IXFH80N10Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFH80N15Q Power MOSFET (IXYS Corporation)
IXFH80N20Q Power MOSFETs Q-Class (IXYS)
IXFH80N25X3 Power MOSFET (IXYS)
IXFH80N60X2A N-Channel MOSFET (INCHANGE)
IXFH80N60X2A Power MOSFET (IXYS)
IXFH80N65X2 Power MOSFET (IXYS)
IXFH80N65X2 N-Channel MOSFET (INCHANGE)
