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IXFH80N10Q Datasheet HiPerFET Power MOSFETs

Manufacturer: IXYS (now Littelfuse)

Download the IXFH80N10Q datasheet PDF. This datasheet also includes the IXFT80N10Q variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFT80N10Q_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data IXFH 80N10Q IXFT 80N10Q VDSS ID25 RDS(on) = 100 V = 80 A = 15 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 100 100 ±20 ±30 80 320 80 30 1.5 5 360 -55 ...

+150 150 -55 ...

+150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.

Key Features

  • IXYS advanced low gate charge process.
  • International standard packages.
  • Low gate charge and capacitance - easier to drive - faster switching.
  • Low RDS (on).
  • Unclamped Inductive Switching (UIS) rated.
  • Molding epoxies meet UL 94 V-0 flammability classification 1.13/10 Nm/lb. in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS =.

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