Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS(on) = 9 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 85 85 ±20 ±30 80 75 320 80 50 2.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g g TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 1.
