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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q
g
IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q
V DSS
ID25
RDS(on) trr
= 150 V
= 80 A = 22.5 mW £ 200 ns
Preliminary data sheet
Symbol VDSS VDGR VGS V
GSM
ID25 I
DM
IAR E
AR
EAS dv/dt
PD T
J
TJM T
stg
TL
Md
Weight
Symbol
V DSS
V GS(th)
IGSS IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
T C
= 25°C
TC = 25°C
I S
£
I,
DM
di/dt
£
100
A/ms,
V DD
£
V, DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247 TO-264
TO-247 TO-264 TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
80
A
320
A
80
A
45
mJ
1.
IXFH80N15Q Datasheet
