Overview: HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q
g IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q V DSS
ID25
RDS(on) trr = 150 V
= 80 A = 22.5 mW £ 200 ns Preliminary data sheet Symbol VDSS VDGR VGS V
GSM
ID25 I
DM
IAR E
AR
EAS dv/dt
PD T
J
TJM T
stg
TL
Md
Weight
Symbol
V DSS
V GS(th)
IGSS IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C T C = 25°C TC = 25°C I S £ I,
DM di/dt £ 100 A/ms, V DD £ V, DSS TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-264
TO-247 TO-264 TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 80 A 320 A 80 A 45 mJ 1.5 J 5 V/ns 360 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 g 10 g 4 g Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I = 250 uA 150 GS D V = V , I = 4 mA 2.0 DS GS D VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % V 4.0 V
±100 nA 25 mA 1 mA
22.
