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IXFH80N10Q - HiPerFET Power MOSFETs

Download the IXFH80N10Q datasheet PDF. This datasheet also covers the IXFT80N10Q variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • IXYS advanced low gate charge process.
  • International standard packages.
  • Low gate charge and capacitance - easier to drive - faster switching.
  • Low RDS (on).
  • Unclamped Inductive Switching (UIS) rated.
  • Molding epoxies meet UL 94 V-0 flammability classification 1.13/10 Nm/lb. in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFT80N10Q_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFH80N08 Power MOSFET IXYS
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IXFH80N25X3 Power MOSFET IXYS
IXFH80N60X2A N-Channel MOSFET INCHANGE
IXFH80N60X2A Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFH80N10 Power MOSFET
IXFH80N15Q Power MOSFET
IXFH80N085 Power MOSFET
IXFH86N30T Power MOSFET
IXFH88N30P Polar HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data IXFH 80N10Q IXFT 80N10Q VDSS ID25 RDS(on) = 100 V = 80 A = 15 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 100 100 ±20 ±30 80 320 80 30 1.5 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.