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IXFH80N10Q - HiPerFET Power MOSFETs

This page provides the datasheet information for the IXFH80N10Q, a member of the IXFT80N10Q HiPerFET Power MOSFETs family.

Product Overview

IXYS Corporation

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IXFH80N10Q HiPerFET Power MOSFETs by IXYS Corporation - Datasheet Preview — Datasheet preview – IXFH80N10Q

Datasheet Details

Part number	IXFH80N10Q
Manufacturer	IXYS Corporation
File Size	73.94 KB
Description	HiPerFET Power MOSFETs
Datasheet	IXFH80N10Q Datasheet
Additional preview pages of the IXFH80N10Q datasheet.

IXFH80N10Q Product details

Features

IXYS advanced low gate charge process.
International standard packages.
Low gate charge and capacitance - easier to drive - faster switching.
Low RDS (on).
Unclamped Inductive Switching (UIS) rated.
Molding epoxies meet UL 94 V-0 flammability classification 1.13/10 Nm/lb. in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS =.

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Published: May 23, 2011 |