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IXFH80N10 - Power MOSFET

Key Features

  • l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 50 1 12.5 V V nA µA mA mΩ Advantages l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Easy to mount Space savings H.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V = 80 A ID25 RDS(on) = 12.5 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 100 100 ±20 ±30 80 75 320 80 50 2.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 ( IXFT) Case Style G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.