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IXFH86N30T - Power MOSFET

Download the IXFH86N30T datasheet PDF. This datasheet also covers the IXFT86N30T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • High Current Handling Capability.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFT86N30T_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH86N30T N-Channel MOSFET INCHANGE
IXFH80N08 Power MOSFET IXYS
IXFH80N20Q Power MOSFETs Q-Class IXYS
IXFH80N25X3 Power MOSFET IXYS
IXFH80N60X2A N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH80N085 Power MOSFET
IXFH80N10 Power MOSFET
IXFH80N10Q HiPerFET Power MOSFETs
IXFH80N15Q Power MOSFET
IXFH88N30P Polar HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH86N30T IXFT86N30T VDSS = 300V ID25 = 86A  RDS(on) 46m TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V 20 V 30 V 86 A 190 A 43 A 1.5 J 860 W 20 V/ns -55 to +150 C +150 C -55 to +150 C 300  C 260 C 1.13/10 Nm/lb.in. 6.0 g 4.