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IXFK30N50Q Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 500 V 30 A 500 V 32 A RDS(on) 0.16 Ω 0.15 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 500 V 500 V ±20 V ±30 V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 30N50Q 30 A 32N50Q 32 A 30N50Q 120 A 32N50Q 128 A 32 A 45 mJ 1500 mJ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque 5 V/ns 416 -55 ...

+ 150 150 -55 ...

+ 150 300 1.13/10 W °C °C °C °C Nm/lb.in.

Key Features

  • z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z PLUS 247TM package for clip or spring mounting z Space savings z High power density © 2002 IXYS All rights reserved 98604D (06/02) IXFK 30N50Q IXFK 32N50Q IXFX 30N50Q IXFX 32N50Q Symbol Test Conditions Characteristic Values.

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