IXFM13N50 Datasheet (IXYS Corporation)

IXFM13N50 Description

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 IXFM 13 N50 VDSS ID (cont) RDS(on) trr = 500 V = 13 A = 0.4 W £ 250 ns Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg TL Md Weight Symbol V DSS VGS(th) I GSS IDSS RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM,

IXFM13N50 Features

* q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Uninterruptible Power Supplies (

IXFM13N50, Power MOSFET - IXYS Corporation

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IXFM13N50 Description