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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
IXFH/IXFM 10 N100 IXFH/IXFM 12 N100
VDSS
1000 V 1000 V
ID25
10 A 12 A
RDS(on)
1.20 Ω 1.05 Ω
trr ≤ 250 ns
Maximum Ratings TO-247 AD (IXFH)
VDSS VDGR VGS VGSM ID25
IDM
IAR
EAR dv/dt
PD TJ TJM Tstg TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
1000
V
1000
V
±20
V
±30
V
(TAB)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.
IXFM10N100 Datasheet
