Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 IXFM 13 N50 VDSS ID (cont) RDS(on) trr = 500 V = 13 A = 0.4 W £ 250 ns Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR dv/dt
PD T
J
TJM T
stg
TL Md Weight
Symbol
V DSS
VGS(th) I
GSS
IDSS
RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 500 V 500 V ±20 V ±30 V 13 A 52 A 13 A 18 mJ 5 V/ns 180 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. V GS = 0 V, I
D = 250 mA 500 VDS = VGS, ID = 2.5 mA 2 V GS = ±20 V, DC V DS = 0 VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % V 4V
±100 nA
200 mA 1 mA
0.
