Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 V DSS
800 V 800 V I
D25
11 A 13 A trr £ 250 ns R DS(on)
0.95 W 0.80 W Symbol VDSS VDGR VGS VGSM ID25
IDM
I
AR
EAR dv/dt
P D
TJ TJM Tstg TL Md Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque Maximum Ratings TO-247 AD (IXFH) 800 V 800 V ±20 V ±30 V (TAB) 11N80 11 A 13N80 13 A TO-204 AA (IXFM) 11N80 13N80 44 52 A A Package unavailable 11N80 11 A 13N80 13 A 30 mJ 5 V/ns G D . G = Gate, D = Drain, S = Source, TAB = Drain 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in.
