IXFM11N80 Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: G = Gate, D = Drain, S = Source, TAB = Drain 300 W -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in.
IXFM11N80 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
- VDSS VGS = 0 V