* International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Low package indu
IXFN340N06 Datasheet (100.59 KB)
IXFN340N06
IXYS Corporation
100.59 KB
Power mosfet.
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.
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