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IXFN30N110P Datasheet, IXYS Corporation

IXFN30N110P hiperfet equivalent, polar power mosfet hiperfet.

IXFN30N110P Avg. rating / M : 1.0 rating-14

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IXFN30N110P Datasheet

Features and benefits


* International standard package
* Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1.

Application

z z z 50 μA 2.5 mA 360 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power .

Image gallery

IXFN30N110P Page 1 IXFN30N110P Page 2 IXFN30N110P Page 3

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