IXFN32N80P Datasheet | IXYS

Polar HVTM Hi Per FET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 270 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL ..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 29 250 30 100 5 10 625 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C °C V~ V~ mini BLOC, SOT-227 B (IXFN) E153432 S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features - International standard package - Encapsulating epoxy meets 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 m A t=1s Mounting torque Terminal connection torque 300 2500 3000 UL 94 V-0, flammability classification - mini BLOC with Aluminium nitride l l Md Weight 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. 30 g l isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDS = VGS, ID = 8 m A VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 16A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±200 25 2 270 V V n A μA m A mΩ Advantages l l l Easy to mount Space savings High power density © 2006 IXYS All rights reserved DS99605E(08/06) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 20 8820 VGS = 0 V, VDS = 25 V, f = 1 MHz 660 22 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 16A RG = 2 Ω (External) 29 85 26 150 VGS = 10 V, VDS = 0.5 VDSS, ID = 16 A 39 44 0.2 0.05 38 S n F p...