Datasheet4U Logo Datasheet4U.com

IXFN32N80P - PolarHV HiPerFET Power MOSFET

Key Features

  • International standard package.
  • Encapsulating epoxy meets 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque 300 2500 3000 UL 94 V-0, flammability classification.
  • miniBLOC with Aluminium nitride l l Md Weight 1.5 / 13 Nm/lb. in. 1.5 / 13 Nm/lb. in. 30 g l isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFN32N60 HiPerFET Power MOSFET IXYS
IXFN320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET IXYS
IXFN300N20X3 N-Channel Enhancement Power MOSFET IXYS
IXFN36N100 Power MOSFET ETC
IXFN36N60 HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFN32N100P Polar Power MOSFET HiPerFET
IXFN32N120 HiPerFET Power MOSFETs
IXFN32N120P Polar HiPerFET Power MOSFET
IXFN300N10P Power MOSFET
IXFN30N110P Polar Power MOSFET HiPerFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N80P VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 270 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 29 250 30 100 5 10 625 -55 ... +150 150 -55 ...