IXFN30N110P
IXFN30N110P is Polar Power MOSFET HiPerFET manufactured by IXYS.
Polar TM Power MOSFET Hi Per FETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS d V/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1m A
..net
VDSS ID25
RDS(on) trr
= = ≤ ≤
1100V 25A 360mΩ 300ns mini BLOC, SOT-227 B (IXFN) E153432 Maximum Ratings 1100 1100 ± 30 ± 40 25 75 15 1.5 20 695 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features
- International standard package
- Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
UL 94 V-0, flammability classification
- mini BLOC with Aluminium nitride isolation
- Fast recovery diode
- Unclamped Inductive Switching (UIS) t = 1min t = 1s rated
- Low package inductance
- easy to drive and to protect Advantages
- Easy to mount
- Space savings
- High power density
Mounting torque Terminal connection torque
Weight
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 15A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 1100 3.5 6.5 ± 200 V V n A
Applications: z z z
50 μA 2.5 m A 360 mΩ z z
High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters
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DS99899A...
