IXFN30N110P - Polar Power MOSFET HiPerFET

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IXYS Corporation

Part number	IXFN30N110P
Manufacturer	IXYS Corporation
File Size	126.61 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFN30N110P Datasheet
Additional preview pages of the IXFN30N110P datasheet.

International standard package.
Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. UL 94 V-0, flammability classification.
miniBLOC with Aluminium nitride.

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Published: May 13, 2011 |