IXFN32N120 Datasheet | IXYS

Advanced Technical Data Hi Per FETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = 1200V = 32A = 0.35Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL ..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ≤ 150°C, RG = 2 Ω TC= 25°C Maximum Ratings 1200 1200 ± 30 ± 40 32 128 32 64 4 15 780 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C V~ V~ mini BLOC, SOT-227 B (IXFN) E153432 G = Gate S = Source D = Drain TAB = Drain Either Source terminal at mini BLOC can be used as Main or Kelvin Source Features - International standard package - - - - - - mini BLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier 50/60 Hz, RMS IISOL ≤ 1 m A t = 1 min t=1s 2500 3000 Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 50 3 0.35 V V n A µA m A Ω Applications - DC-DC...