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IXFN32N120 - HiPerFET Power MOSFETs

Key Features

  • International standard package.
  • miniBLOC, with Aluminium nitride isolation Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = 1200V = 32A = 0.35Ω D G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ≤ 150°C, RG = 2 Ω TC= 25°C Maximum Ratings 1200 1200 ± 30 ± 40 32 128 32 64 4 15 780 -55 ... +150 150 -55 ...