IXFN300N10P Datasheet | IXYS

Polar TM Hi Per FETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL M d Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL  1m A Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 20  30 20 1070 -55 ... +175 175 -55 ... +175 300 V/ns W C C C C 2500 3000 1.5/13 1.3/11.5 V~ V~ Nm/lb.in Nm/lb.in 30 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3m A VGS(th) VDS = VGS, ID = 8m...