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IXFN30N120P - Polar Power MOSFET HiPerFET

Key Features

  • International standard package.
  • Encapsulating epoxy meets UL 94 V-0, flammability classification.
  • miniBLOC with Aluminium nitride 1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 isolation.
  • Fast recovery diode.
  • Unclamped Inductive Switching (UIS) rated.
  • Low package inductance - easy to drive and to protect Advantages.
  • Easy.

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Other Datasheets by IXYS (now Littelfuse)

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IXFN30N110P Polar Power MOSFET HiPerFET
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IXFN32N120P Polar HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN30N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 30A 350mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 30 75 15 2 20 890 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.