IXFN30N120P
IXFN30N120P is Polar Power MOSFET HiPerFET manufactured by IXYS.
Polar TM Power MOSFET Hi Per FETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d V/dt PD TJ TJM Tstg TL VISOL Md
..net
VDSS ID25
RDS(on) trr
= = ≤ ≤
1200V 30A 350mΩ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 30 75 15 2 20 890 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g mini BLOC, SOT-227 B (IXFN) E153432
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features
- International standard package
- Encapsulating epoxy meets
UL 94 V-0, flammability classification
- mini BLOC with Aluminium nitride
1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1m A Mounting torque Terminal connection torque t = 1min t = 1s
300 2500 3000 1.5/13 1.3/11.5 30 isolation
- Fast recovery diode
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect Advantages
- Easy to mount
- Space savings
- High power density
Weight
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 300 V V
Applications z z n A...
