IXFN32N120P
IXFN32N120P is Polar HiPerFET Power MOSFET manufactured by IXYS.
Polar TM Hi Per FETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ ≤ 300ns trr mini BLOC E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1200 1200 ±30 ±40 32 100 16 2 20 1000 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Advantages z
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1m A t = 1 minute t = 1 second
300 260 2500 3000 1.5/13 1.3/11.5 30 z z z z z
Mounting Torque Terminal Connection Torque
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International Standard Package mini BLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) HDMOSTM Process
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 1m A VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ±300 50 5 V V n A μA m A z z
Easy to Mount Space Savings High Power Density
Applications z z
VGS = 10V, ID = 0.5
- ID25, Note 1
310 mΩ z z z
High Voltage Switch-Mode and Resonant-Mode Power Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC Converters High Voltage DC-AC Inverters
© 2010 IXYS Corporation, All Rights Reserved
DS99718H(03/10)
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi...
