IXFN32N100P
IXFN32N100P is Polar Power MOSFET HiPerFET manufactured by IXYS.
Polar TM Power MOSFET Hi Per FETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS d V/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1m A
..net
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 27A 320mΩ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 27 75 16 1.5 20 690 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g mini BLOC, SOT-227 B (IXFN) E153432
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features z z z t = 1min t = 1s z z
Mounting torque Terminal connection torque z
International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification mini BLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect
Weight
Advantages z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 16A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V n A z z
Easy to mount Space savings High power density
Applications z
50 μA 2.5 m A 320 mΩ z z z z
Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
DS99880A(4/08)
Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS 0.05 VGS = 10V, VDS = 0.5
-...
