IXFN340N06
IXFN340N06 is Power MOSFET manufactured by IXYS.
Advanced Technical Information
Hi Per FETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 m A t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFN 340N06
VDSS = 60 V ID25 = 340 A 3 m W RDS(on) = trr £ 250 ns
Maximum Ratings 60 60 ± 20 ± 30 340 100 1360 200 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A m J J V/ns W °C °C °C V~ V~ mini BLOC, SOT-227 B (IXFN) E153432
G = Gate S = Source
D = Drain
Either Source terminal at mini BLOC can be used as Main or Kelvin Source
Features
International standard packages mini BLOC, with Aluminium nitride isolation
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Low package inductance Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 3 V V n A m A m A m W
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies
VDSS VGH(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 3 m A V DS = VGS, ID = 8 m A V GS = ±20 VDC, VDS = 0 V DS = VDSS V GS = 0 V V GS = 10 V, ID = 100A Pulse test, t £ 300 ms, duty cycle d £ 2 %
DC choppers Temperature and lighting controls
Advantages
Easy to mount Space savings High power density
98751 (10/00)
© 2000 IXYS All rights reserved
IXFN 340N06
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max....
