IXFN340N07
IXFN340N07 is Power MOSFET manufactured by IXYS.
Hi Per FETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 m A t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFN 340N07
VDSS ID25
RDS(on)
= 70 V = 340 A = 4 m W
G S trr £ 250ns
Maximum Ratings 70 70 ± 20 ± 30 340 100 1360 200 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A m J J V/ns W °C °C °C V~ V~ mini BLOC, SOT-227 B (IXFN) E153432
G = Gate S = Source
D = Drain
Either Source terminal at mini BLOC can be used as Main or Kelvin Source
Features
International standard packages mini BLOC, with Aluminium nitride isolation
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
Low package inductance Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 4 V V n A m A m A m W
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 m A VDS = VGS, ID = 8 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 100A Pulse test, t £ 300 ms, duty cycle d £ 2 %
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies
DC choppers Temperature and lighting controls
Advantages
Easy to mount Space savings High power density
98547B (10/00)
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