IXFN34N100
IXFN34N100 is Power MOSFET manufactured by IXYS.
Hi Per FETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 34N100
VDSS ID25
RDS(on)
= 1000V = 34A = 0.28W
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ£ 150°C, RG = 2 W TC= 25°C
Maximum Ratings 1000 1000 ± 20 ± 30 34 136 34 64 4 5 700 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C V~ V~
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight mini BLOC, SOT-227 B (IXFN) E153432
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at mini BLOC can be used as Main or Kelvin Source
Features
International standard packages isolation
mini BLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier
Applications DC-DC converters rated
50/60 Hz, RMS IISOL £ 1 m A t = 1 min t=1s
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 100 2 0.28 V V n A m A m A W
Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 m A V DS = VGS, ID = 8 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5
- ID25 Pulse test, t £ 300 ms, duty cycle d £ 2...
