IXFN34N80 Description
HiPerFETTM Power MOSFETs Single DieMOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet IXFN 34N80 D VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr £ 250 ns S Symbol .. Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ VDSS miniBLOC, SOT-227 B E153432 S G VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md...
IXFN34N80 Key Features
- International standard packages
- miniBLOC, with Aluminium nitride
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- Fast intrinsic Rectifier