IXFN34N80 Datasheet | IXYS

Hi Per FETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet IXFN 34N80 VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr £ 250 ns Symbol .. Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 34 136 34 64 3 5 600 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C °C V~ V~ VDSS mini BLOC, SOT-227 B E153432 VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight G = Gate S = Source D = Drain Either Source terminal of mini BLOC can be used as Main or Kelvin Source Features - International standard packages - mini BLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 m A t = 1 min t=1s 300 2500 3000 isolation - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g rated - Low package inductance - Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 3.0 -0.214 ±200 TJ = 25°C TJ = 125°C 100 2 0.24 5.0 V %/K V %/K n A m A m A...