* International standard packages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1
IXFN60N60 Datasheet (71.37 KB)
IXFN60N60
IXYS Corporation
71.37 KB
Hiperfet power mosfet.
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM .
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