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IXFN64N50PD2 - Power MOSFET

Features

  • z Mounting Torque Terminal Connection Torque 1.5/13 1.3/11.5 30 Fast Intrinsic Diode in Boost Configuration z International Standard Package z Encapsulating Epoxy Meets UL 94 V-0, Flammability Classification z miniBLOC with Aluminium Nitride Isolation z Avalanche Rated z Low Package Inductance Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 500μA VDS = VGS, ID = 8mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID =.

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Datasheet Details

Part number IXFN64N50PD2
Manufacturer IXYS
File Size 164.39 KB
Description Power MOSFET
Datasheet download datasheet IXFN64N50PD2 Datasheet
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PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations (Ultra-fast FRED Diode) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN64N50PD2 IXFN64N50PD3 3 4 3 VDSS ID25 trr RDS(on) = 500V = 50A ≤ 85mΩ ≤ 200ns miniBLOC, SOT-227 B E153432 2 1 4 2 2 D2 1 D3 1 4 3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg Md www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤150°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 50 200 64 2.5 10 625 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C Nm/lb.in. Nm/lb.in.
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