IXFR15N80Q mosfet equivalent, hiperfet power mosfet.
D = Drain
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab ca.
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.5 ±100 TJ .
Image gallery
Download