IXFR15N80Q Datasheet (IXYS Corporation)

IXFR15N80Q - HiPerFET Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°

IXFR15N80Q Features

* D = Drain

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR15N80Q Datasheet - IXYS Corporation

IXFR15N80Q - HiPerFET Power MOSFET

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