IXFR100N25 Description
Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFR 100N25 VDSS ID25 RDS(on) = 250 V = 87 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM.
IXFR100N25 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<30pF)