IXFR100N25 - HiPerFET Power MOSFETs

IXYS (now Littelfuse)

Key Features

l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(.

IXFR100N25 hiperfet power mosfets by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFR100N25
Manufacturer	IXYS (now Littelfuse)
File Size	81.49 KB
Description	HiPerFET Power MOSFETs
Datasheet	IXFR100N25 Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXFR10N100F	HiPerFET Power MOSFETs
IXFR10N100Q	N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFR 100N25 VDSS ID25 RDS(on) = 250 V = 87 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = External lead current limit = 25°C, Note 1 = 25°C Maximum Ratings 250 250 ± 20 ± 30 87 75 400 100 64 3 5 400 -55 ... +150 150 -55 ...