Overview: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFR 100N25 VDSS ID25
RDS(on) = 250 V = 87 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = External lead current limit = 25°C, Note 1 = 25°C Maximum Ratings 250 250 ± 20 ± 30 87 75 400 100 64 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C * Patent pending 1.6 mm (0.063 in.
