IXFR12N100Q Datasheet | IXYS

Advanced Technical Information Hi Per FETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High d V/dt Low Gate Charge and Capacitances Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ±20 ±30 10 9 48 40 12 10 30 5 250 -55 ... +150 150 -55 ... +150 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 V V V V A A A A A A m J V/ns W °C °C °C °C V~ g Features ISOPLUS 247TM VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Isolated back surface- D = Drain G = Gate S = Source - Patent pending - Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation - Low drain to tab capacitance(<50p F) - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.5 ±100 TJ = 25°C TJ = 125°C 12N100 10N100 50 1 1.05 1.2 V V n A m A m A W W Advantages - Easy assembly - Space savings - High power density - DC-DC converters - Battery chargers - Switched-mode and resonant-mode power supplies - DC...