IXFR120N20
IXFR120N20 is Power MOSFET manufactured by IXYS.
Advanced Technical Information
Hi Per FETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105
(Electrically Isolated Back Surface) Single MOSFET Die
RDS(on) =
V A 17 m W trr £ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 200 200 ±20 ±30 105 76 480 120 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V
ISOPLUS 247TM E153432
A A A A m J J V/ns
Isolated back surface- D = Drain
G = Gate S = Source
- Patent pending
Features
W °C °C °C °C V~ g
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<25p F)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier Applications
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 n A TJ = 25°C TJ = 125°C 100 m A 2 m A 17 m W
VDSS VGS(th) IGSS IDSS...
