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IXFR180N10 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data RDS(on) = V A 8 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 100 100 ±20 ±30 165 76 720 180 60 3 5 400 -55 ...

+150 150 -55 ...

Key Features

  • W °C °C °C °C V~ g.
  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
  • Low drain to tab capacitance(.

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