Datasheet4U Logo Datasheet4U.com

IXFR180N07 Datasheet HiPerFET Power MOSFETs

Manufacturer: IXYS (now Littelfuse)

Overview

HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight www.DataSheet4U.net VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW trr £ 250 ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 70 70 ±20 ±30 180 76 720 180 60 3 5 400 -55 ...

+150 150 -55 ...

Key Features

  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
  • Low drain to tab capacitance(.